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(IT-NEWSWIRE.COM, November 06, 2018 ) An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
With the increasing number of wind farms, worldwide, along with high investments from the governments, the IGBT market is expected to grow multi-fold.
Over the next five years, it is projected that Insulated-Gate Bipolar Transistor (IGBT) will register a xx% CAGR in terms of revenue, reach US$ xx million by 2023, from US$ xx million in 2017.
This report covers the present scenario (with the base year being 2017) and the growth prospects of global Insulated-Gate Bipolar Transistor (IGBT) market for 2018-2023.
This report presents a comprehensive overview, market shares, and growth opportunities of Insulated-Gate Bipolar Transistor (IGBT) market by product type, application, key manufacturers and key regions.
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The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report: Renesas Electronics Infineon Technologies Fuji Electric ROHM SEMIKRON Mitsubishi Electric Toshiba Hitachi ON Semiconductor ABB Danfoss
Browse Complete Report@ http://www.orbisresearch.com/reports/index/global-insulated-gate-bipolar-transistor-igbt-market-growth-2018-2023
To calculate the market size, it is considered value and volume generated from the sales of the following segments:
Segmentation by product type: Discrete IGBT Modular IGBT
Segmentation by application: EV/HEV Renewables UPS Rail Motor Drives Industrial Commercial
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Some Points From Table of Content: 1 Scope of the Report 2 Executive Summary 3 Global Insulated-Gate Bipolar Transistor (IGBT) by Players 4 Insulated-Gate Bipolar Transistor (IGBT) by Regions 5 Americas 6 APAC 7 Europe Continued…
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